The evolution of roughness of supersmooth surfaces by ion-beam etching

Abstract

The behavior of roughness on surfaces of Cr/Sc multilayer structure, crystalline silicon [100], and fused quartz upon ion beam etching in the region of middle and high frequencies of the spatial spectrum (10−2–102 μm−1) is studied. The possibility of keeping surface roughness at level σ ∼ 0.3 nm upon etching by Ar atoms/ions to depths of up to 10 μm is demonstrated.