Abstract
The formation of H2 molecules in voids/platelets and their evolution upon annealing were studied. Standard p- and n-type Czochralski (Cz) silicon wafers have been treated by a hydrogen plasma at 250°C. After the plasma hydrogenation the samples were annealed at temperatures up to 600°C in air. Investigations were done by Raman spectroscopy. H2 did appear as nearly free molecules in the platelets/voids (Raman shift ∼4150cm−1), but not on the tetrahedral interstitial position in the Si lattice. The normalized Raman intensities of the H2 vibration modes exhibited significant sensitivity to the annealing temperature for both p- and n-type Cz Si. These peculiarities can be explained by the evolution of the platelets during annealing.
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