Abstract
We have investigated the initial stage of the MnAs film growth using photoelectron spectroscopy. Two types of p-type Si(001) substrates, with a Mn first layer and an As first layer were used. It is found that, a manganese silicide (MnSi) and silicon oxide are formed around the interface when 1 ML of Mn is deposited first on Si. On the other hand, there is no silicon oxide formed at the interface when As is deposited first. Because of this As-passivation, the sample on which As is deposited first, has the sharper interface and the better film quality than the Mn-first sample. The interfacial alloys were analyzed by cross-sectional transmission electron microscope (TEM) observation in the MnAs/Si system. To prevent the formation of interfacial alloys, we have tried to insert GaAs between MnAs and Si, resulting in the growth of MnAs film with improved film quality.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
