Abstract
The ion beam induced charge (IBIC) microscopy was developed in the early 1990’s as a means of imaging device depletion regions and dislocations in semiconductor wafers. To better understand the operation performance of the micro-electronic devices and semiconductor radiation detectors, the IBIC microscopy was established on the microprobe system at Fudan University. A customized target holder was designed, on which the CdZnTe detector is fixed with adhesive tape.In this work, the device performance of a CdZnTe detector was evaluated using the established IBIC technique and we primarily choose the appropriate bias voltage and have successfully used the frontal IBIC to evaluate the quality of one CdZnTe detector. What’s more, the regions of the crystal defect and ion beam-induced radiation damage can be localized accurately.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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