Abstract
Mg2(Ge, Sn) solid solutions are eco-friendly thermoelectric materials in moderate temperature (500–800 K) range. However, p-type Mg2(Ge, Sn) solid solutions show poor thermoelectric performance compared to the n-type counterpart. In this work, the filtering of low energy holes and the blocking of thermal excited electrons in Mg1.92Li0.08 Ge0.4Sn0.6 by Si addition are demonstrated, which optimize the power factor by interface barrier and reduce the lattice thermal conductivity by nanoscale composition fluctuation. Finally, the power factor of ~1.85 × 10−3 Wm−1 K−2 and the dimensionless figure of merit ZT ~0.75 are achieved in Li doped Mg2Ge0.4Sn0.6 with Si addition at 723 K.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
