Abstract
A narrow optical band gap of a-SiSn (Cl:H) alloy has been prepared by G D technique using SiH 4 and SnCl 4 gas mixtures. The optical band gap and the photoconductivity of the a-SiSn (Cl:H) alloy decreases steadily (band gap from 1.8--1.2ev) with increasing Sn content in the film, and the predominant conduction mechanism changes from n to p type. We have doped some quantity of phosphor for compensation into a-SiSn (Cl:H) alloys (E opt1.45--1.5ev) using pH 3, SiH 4, SnCl 4 gas mixtures. As the P concentration increases to a suitable quantity, the photoconductivity of the alloys enhance two or three order of magnitudes and the conduction mechanism changes from p to n type.
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