The enhancement of the output characteristics in the GaN based multiple‐channel planar Gunn diode

Abstract

We present an explicit numerical analysis on GaN‐based multi‐quantum‐well planar Gunn diodes. The simulation demonstrates that Gunn oscillations generated in the multi‐channel can be self‐synchronized to each other, which significantly improves the output characteristics of planar Gunn diode due to the superposition of the dipole domain in each channel. The optimized output characteristics are obtained in the triple‐channel Gunn diode, where the RF output power is about 6.45 mW and the DC‐to‐RF conversion efficiency is about 2.39% at the fundamental frequency of 216.05 GHz, more than three times larger than that of the single‐channel AlGaN/GaN Gunn diode. The proposed GaN HEMT‐like multi‐channel planar Gunn diode with higher level of output characteristics shows great potential as a solid‐state radiation source of millimeter‐wave and sub‐terahertz.