The enhanced photoelectric performances and capacitance effects of In2O3/3D rGO

Abstract

In this study, Indium oxide (In2O3) and 3D reduced graphene oxide (3D rGO) composites were obtained by hydrothermal treatment. The structure composition, morphology, surface area and band gap of In2O3/3D rGO were analyzed by a series of techniques. The relationship between the photoelectric properties and capacitance of In2O3/3D rGO composites with various mass proportions was investigated, and the results indicated that the steady-state photocurrent density of In2O3/3D rGO increased and then started to drop with the increase of the specific capacitance. The current density of In2O3/3D rGO reached a maximum of 0.11 mA/cm2 at the intermediate specific capacitance (77.8 mF/cm2). This photocurrent trend of the composites was attributed to the positive and negative effects of capacitance. The proper capacitance might result in the low recombination rate of photogenerated carriers and holes, while the overlarge capacitance might limit the release of electrons, thus reducing the photocurrent generation. This research result was expected to provide favorable conditions for further applications of 3D graphene and new strategies to improve the photoelectric performance of In2O3.