Abstract
SiC MOSFET and Si IGBT based hybrid switches (HyS) has low conduction loss and low switching loss. At the same time, HyS device costs are much less than pure SiC MOSFET device with the same power rating. The promising performance of HyS can help to design a high power design converter system with over 30 kHz and 50 kW applications. In this paper, a series of SiC/Si HyS modules are designed, and some of them were developed and tested.
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