Abstract
Lead-free (0.94-x)Bi0.5Na0.5TiO3–0.06BaTiO3−xSrTiO3 (abbreviated as BNT-BT-xST, x = 0, 0.05, 0.10, 0.15, 0.20) thin films were grown onto the Pt/Ti/SiO2/Si substrate via a sol-gel/spin-coating method. Effect of Sr introduction on the microstructures, dielectric properties and energy-storage density of the thin films was researched. As a consequence, the addition of ST enhanced the maximum polarization and dielectric constant of the thin films. BNT-BT-0.05ST thin film existed high maximum recoverable energy-storage densigty (Ue) 22.5 J/cm3, dielectric constant 1120 and low dielectric loss about 0.04 at 1 kHz. Moreover, the thin films showed excellent dielectric temperature stability at the measured temperature range among 25–200 °C. These results indicated that BNT-BT-0.05ST thin film can be a promising candidate for lead-free energy storage capacitor.
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