The Energy-Driven Hot Carrier Degradation Modes

Abstract

In this work, we confirm that the energy is the driving force of hot carrier effects. In the high energy-, long channel-case, the LEM picture is still valid. But when the energy is lowered, high energy electrons generated by electron-electron scattering (EES) become the dominant contribution to the degradation. Finally, for even lower energy, the hot carrier degradation becomes a composite mode combining both multiple vibrational excitation (MVE) mechanism (Hess, 1999) and medium-energy electrons heated by EES (Rauch, 2001)