Abstract
The energies of the ground (e0) and the first excited state (e1) in a quantum well (QW) are evaluated within the framework of the triangular QW model. It is shown that the e0 level in QWs at the contacts between cubic (3C) and hexagonal (NH, N = 2, 4, 6, 8) polytypes of silicon carbide (SiC) can be effectively controlled only by means of doping a wide-bandgap n-NH-SiC polytype with shallow donors.
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