The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature

Abstract

Au/graphene oxide (GO)-doped PrBaCoO nanoceramic/n-Si capacitors were fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz at room temperature. Experimental results showed that the capacitance (C) and conductance (G/w) values are strong functions of frequency and applied bias voltage. C–V plot revealed two distinctive peaks at low frequencies which are located at about 0 and 2 V, such that the first peak disappears towards high frequencies. The energy density distribution profile of the interface/surface states (D it/N ss) and their relaxation time (τ) and capture cross section (σ p) of the sample were obtained by using the admittance method. In addition, the voltage-dependent profile of N ss and resistance were obtained by using low–high frequency capacitance and Nicollian-Brews method, respectively, and they also reveal two distinctive peaks, respectively. Two peaks’ behavior in the forward bias C–V, N ss–V and R i–V plots confirmed the existence of two different localized regions of N ss between Si and interfacial layer. The series resistance (R s) of the device decreased with increasing frequency from 175 Ω at 1 kHz to 72 Ω at 1 MHz. As a result, the mean value of D it was found about 5 × 1013 eV−1 cm−2 which is reasonable for an electronic device.