The energetic states of quantum dots in the presence of a metallic layer

Abstract

The simulation of electron and hole quasiparticles in semiconductor nanostructure is still an important issue for future electronic and optical devices. In our study, we consider a particular configuration of three-dimensional confinement of electrons into a spherical island of InAs, the quantum dot, situated at the interface between a semiconductor substrate (GaAs) and air. We analyze the effect of a metallic layer (ML), deposited under the semiconductor substrate, on the energy states of confined electrons. In order to characterize the energy of electrons we solved Schrödinger equation for a one-band model using a finite element method. For this configuration, oscillations of the electrons envelope function in the ML are induced by the energy states of the dot and an energy transfer between dot and ML appears.