The emission spectra of p-AlxGa1−xAs–n-GaAs heterojunctions

Abstract

The emission spectra of p-AlxGa1−xAs-n-GaAs heterojunctions with Ge- and Zn-doped AlxGa1−xAs layers have been studied. The dependence of the emission peaks on current, voltage, and temperature are examined. The peak shift observed at all diodes and other spectral characteristics are discussed in terms of a diagonal tunneling mechanism and a band filling model involving acceptor state tails on the valence band of GaAs.