Abstract
The electrophysical properties of the surface of metallic beryllium were studied before and after radiation-thermal treatment in water medium at temperatures 473 –773K under the influence of gamma quanta. On the features of the curves current-voltage characteristics it is established that radiation-thermal modification of the surface of beryllium is accompanied by the formation of oxide structures, defects which are determined by the temperature and time of irradiation. It is shown, that the formation of continuous oxide layer with dielectric properties leads to the increase of the surface resistivity by order. It was a comparative study the kinetics of changes in the values of surface resistivity of contact time for radiation - thermal and thermal oxidized beryllium samples. It was revealed stimulating role of radiation at relatively low temperatures in the oxidation process.
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