Abstract
The electronic (800–400 nm), infrared and ordinary Raman spectra (600-10 cm-1) of NbS 3 polycrystalline samples were investigated. A complete assignment of most fundamentals is proposed and checked by lattice dynamics calculations. Resonance Raman spectra and excitation profiles were examined in detail in the contour of two low energy transitions (λ max = 600 and 560 nm) and they display interesting interference or exact resonance effects depending upon the nature of the mode. Franck-Condon effects of weakly displaced oscillators in the two overlapping electronic states can well account for the observed profiles. New information about the electronic band structure of the NbS 3 semiconductor are thus provided.
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