Abstract
The electronic theory of III-V and II-VI tetrahedrally covalent compounds is presented using a perturbation treatment based on a model potential. In the theory, according to the Jones-zone scheme of Heine and Jones (1969) the higher-order terms with respect to the pseudopotential are considered. Numerical results for the cohesive energy and bulk modulus for these crystals such as AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe and CdTe are in good agreement with the observed data.
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