Abstract
The electronic theory of III-V and II-VI tetrahedrally covalent compounds is presented using a perturbation treatment based on a model potential. In the theory, according to the Jones-zone scheme of Heine and Jones (1969) the higher-order terms with respect to the pseudopotential are considered. Numerical results for the cohesive energy and bulk modulus for these crystals such as AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe and CdTe are in good agreement with the observed data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
