The electronic structures of epitaxial CrSi 2 film prepared on Si(111) substrate

Abstract

The valence band (VB) electronic structures of CrSi 2 were studied by synchrotron radiation photoemission. Overall features of the VB photoemission spectra measured at room temperature (RT) and 20 K by using synchrotron radiation (photon energy, hν=20–120 eV) were similar. Two characteristic emissions were observed corresponding to the bonding and the nonbonding Cr- d partial density of states (PDOS) in the CrSi 2. The onset of the VB photoemission measured at 20 K was located at about 0.32 eV below Fermi level, due to the energy band gap of CrSi 2 more than 0.32 eV.