Abstract
The authors present a simplified tight-binding-based coherent-potential approximation (CPA) formalism for the host electronic structure of semiconductor alloys (e.g. Ga1-xAlxAs). Several schemes to locate the gap level due to point defects are discussed. In particular, they introduce a novel scheme: the deep-level approximation. They also point out that the vacancy results in the CPA are identical with the simpler virtual-crystal approximation. They discuss their results by presenting numerical results in Ga1-xAlxAs and GaAs1-xSbx.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
