Abstract

Cross-sections of a hole-conductor-free CH3NH3PbI3 perovskite solar cell were characterized with Kelvin probe force microscopy. A depletion region width of about 45 nm was determined from the measured potential profiles at the interface between CH3NH3PbI3 and nanocrystalline TiO2, whereas a negligible depletion was measured at the CH3NH3PbI3/Al2O3 interface. A complete solar cell can be realized with the CH3NH3PbI3 that functions both as light harvester and hole conductor in combination with a metal oxide. The band diagrams were estimated from the measured potential profile at the interfaces, and are critical findings for a better understanding and further improvement of perovskite based solar cells.

Highlights

  • Organo metal halide perovskite junctions in perovskite based solar cells Alex Dymshits1*, Alex Henning2*, Gideon Segev[2], Yossi Rosenwaks2 & Lioz Etgar[1]

  • Cross-sections of a hole-conductor-free CH3NH3PbI3 perovskite solar cell were characterized with Kelvin probe force microscopy

  • Kelvin probe force microscopy on cross-sections of hole-conductor-free perovskite based solar cell in dark (Fig. 1a) was used to determine the electronic structure of the interfaces that are critical for the performance (a)

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Summary

Si substrate

The perovskite penetrates through the nc-Al2O3, sintered to the grounded contact; the Fermi level is assumed to be aligned and equal in all three layers This allows a quantitative interpretation of the measured potential for both solar cell structures. These variations are mainly due to the nanostructure and inhomogeneous surface of the measured materials entail a high amount of defect states. The nc-TiO2/MAPbI3 based solar cell has a higher efficiency, the potential difference between the two interfaces in the dark (35 mV) is negligible small. The dopant concentration, Nd, can be estimated with equation 122, Grain boundary

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