Abstract
The electrical levels of various combinations of transition metal-H n defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap t 2 manifold of states due to the impurity. Passive defects are identified.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have