Abstract
The interface formation between a conjugated oligomer (Ooct-OPV5, [(2,5-Bis(4-styryl) styryl)1,4-dioctyloxybenzene]) and ultrathin (6 and 15 Å thick) SiO x ( x≤2) layers on n-doped Si(111), was studied by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Ooct-OPV5 is a model oligomer for PPV [poly( p-phenylenevinylene)], a polymer that has been used in organic light emitting diodes. An ∼8 nm thick oligomer film was grown stepwise on the sputter-cleaned SiO x substrates under ultrahigh vacuum conditions. XPS and UPS results show the layered growth of the oligomer on both substrates. Upon deposition of the oligomer on the ∼6 Å thick SiO x film, a dipole of ∼0.20 eV is formed at the Ooct-OPV5/SiO x interface. When the oligomer is deposited on the ∼15 Å thick SiO x film an interfacial state is observed, which is related to a ∼0.45 eV dipole formed at this interface. The energy level diagram of the Ooct-OPV5/SiO x /Si(111) interfaces is deduced in both cases from the combination of XPS and UPS results.
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