The electronic properties of coaxial triangular quantum well wires

Abstract

The hydrogenic impurity energy states in coaxial triangular cross-section quantum well wires made of GaAs/Alx1Ga1−x1As/GaAs/Alx2Ga1−x2As layers are theoretically studied under electric and magnetic field. The calculations are carried out using the finite-differences technique and the variational approach. The variations of the binding energy of an electron bound to a central hydrogenic impurity are obtained depending on the barrier width and barrier heights. The effects of the magnetic and electric fields with various strengths on those structures are also investigated. The binding energies have been found in dramatic variations against some critical values of the barrier width. It has also been seen that external magnetic and electric field applications have noticeable influences on binding energy. The electric field forces bound electrons to tunnel only at some critical values of barrier width, while the magnetic field causes tunneling at smaller strengths in comparison with those of the electric field.