Abstract
Abstract The band gap bowings of InN x As 1 − x , InN x Sb 1 − x , and InAs x Sb 1 − x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1 − x and InN x Sb 1 − x compared to InAs x Sb 1 − x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1 − x alloys is sharper than that of InN x As 1 − x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1 − x than in InN x As 1 − x alloys to decrease the corresponding effective masses of the electrons around Γ points.
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