Abstract
Using the self-consistent pseudopotential method, within the X α approximation, we have studied the electronic band structure of (GaAs) n (AlAs) n and (GaAs) n (ZnSe) n superlattices. Recent observation on the variation of the band gap in (GaAs) n (AlAs) n and its direct versus indirect nature is explained. Variation of the valence and conduction band discontinuities at GaAs/Al x Ga 1− x As is calculated as a function of x and a comparison is made with experiment. The difference between the electronic properties of the superlattice (GaAs) 1 (AlAs) 1 and the alloy Ga 0.5 Al 0.5 As is investigated in detail. Finally, the variation of the band gap in (GaAs) n (ZnSe) n is compared and contrasted with that in (GaAs) n (AlAs) n .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
