Abstract
Considering the Rashba and Zeeman effects, the effective Hamiltonian for electrons in AlGaN/GaN quantum wells (QWs) with the magnetic field is obtained, and the effective transverse and longitudinal g-factor (g⊥,//) are derived. The small anisotropy of the g factor in bulk wurtzite materials is clearly shown, while the anisotropy in QWs induced by the quantum confined effect is evident. Moreover, the average g factor (g*) depends greatly on the position of the origin along the growth axis (c axis). With increasing well thickness, both g⊥ and g// increase, and the g-factor anisotropy first decreases and then increases slowly. Results show the g-factor and its anisotropy in III-nitride QWs can be modulated by the well thickness, and they are greatly affected by the internal electric field and the quantum confined effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
