Abstract
The search for cold electron field emission materials, with low threshold fields, compatible with existing integrated circuit fabrication has continued to attract a significant research interest over the past several years. This is primarily driven by their potential applications in vacuum microelectronic devices and flat panel displays. In this paper, the preparation of Ag-SiO 2 nanocomposite layers on Si substrates by Ag implantation into thermally oxidized SiO 2 layers is reported. The electron field emission (FE) properties of these nanocomposite layers were studied and correlated with results using other characterisation techniques, including atomic force microscopy, Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. The experimental results indicate that these nanocomposite layers have good FE properties with threshold fields as low as 13 V/μm. The FE mechanisms of these layers are discussed in term of an electrical inhomogeneity effect.
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