Abstract
The electroluminescent properties of single-heterojunction (SH) GaAs light emitting diodes (LEDs), which are obtained by LPE growth of Zn-doped (GaAI)As on Si-doped n-type GaAs substrates, are reported. The emission spectrum is found to be composed of a main peak and a shoulder on the low energy part of the spectra. The relative intensity of this shoulder with respect to the main peak depends on the current level and also on the sheet resistance of the (GaAI)As layer. The low energy shoulder is found to be produced by selective absorption of the light generated at the junction. The emission peak energy increases as the p-type GaAs layer thickness decreases. This has been interpreted as due to an increment in the hole-electron injection ratio as the diffusion layer thickness is decreased. The diodes have a maximum average external quantum efficiency somewhat larger than 1%. The efficiency depends on both the current and the diffused layer width. The decay time of the light emission intensity depends on the current level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
