Abstract
Molybdenum-tantalum alloy thin film is a suitable material for the higher corrosion resistance and low resistivity for gate and data metal lines. In this study, Mo-Ta alloy thin films were prepared by using a DC magnetron co-sputtering system on a glass substrate. An abrupt increase in the etching rates of low Mo-Ta alloys was observed. From the observed impedance analysis, the defect densities in the MoTa oxide films increased from 5.4 x 10(21) (cm(-3)) to 8.02 x 10(21) (cm(-3)) up to the 6 at% of tantalum level; and above the 6 at% of tantalum level, the defect densities decreased. This electrochemical behavior is explained by the mechanical instability of the MoTa oxide film.
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