Abstract
The electro optic characteristics of the fringe-field switching (FFS) mode can be investigated by a combination of in-plane switching (IPS) at electrode center and low-twist TN (= electrode edge). In other words, the smaller optimal optical retardation and higher operating voltage of the IPS mode compared with the low-twist TN mode mean that the retardation and operating voltage (=Vop) of the FFS mode can not be optimized for maximum transmittance at both the center and the edge of the electrode. In the multi-cell gap (= MCG)-FFS mode, the operating voltage at the edge is increased by heightening the cell gap at the edge and is shifted near Vop at the center. One notable result is that the transmittance at the center with increased value D (= the cell gap at the near edge) becomes higher owing to the increased twist angle. In conclusion, the novel FFS mode has a higher transmittance than the conventional FFS mode.
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