Abstract
The temperature dependent electrical transport properties of n-type ReS 2 and ReSe 2 were investigated over an extended range from 30 to 630 K. The activation energies for the impurity carriers in the temperature range of 250–350 K for n-type ReS 2 and ReSe 2 were determined to be 178 and 103 meV, respectively. From the high temperature conductivity measurement, the thermal band gaps for the intrinsic carriers were evaluated to be 1.19 eV for ReS 2 and 0.98 eV for ReSe 2. We have also reported for the first time the electrical anisotropy of the ReS 2 and ReSe 2 single crystals in the van der Waals plane by measuring the resistivity along the different crystal orientations.
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