The Electrical Resistivity of Monocrystalline Films Deduced From Derivation of the Mayadas-Shatzkes Equations

C R Tellier,A J Tosser

doi:10.1155/apec.3.165

Abstract

The theoretical expression deduced by Mola and Heras from the Mayadas–Shatzkes model of monocrystalline thin film resistivity is approximated assuming that the Sommerfeld relation is valid and introducing corrections to the Matthiessen's rule.The approximate expression of kρf /ρ0deviates from less than 6% in the 0.01–2 k-range, 0–0.5p-range and 0.1–0.62r-range.

Highlights

Mayadas and Shatzkes have proposed a theoretical calculation of the electrical resistivity of thin metallic films; they have considered the simultaneous action of isotropic electron scattering, surface scattering and grain boundary scattering
In this paper we propose an approximate expression of the resistivity of monocrystalline films which is valid in larger ranges
Under the assumption that the effects due to surface scattering and to grain-boundary scattering may be treated separately, we obtain an approximate expression containing a term directly related to grainboundary scattering and another related to surface scattering

Summary

INTRODUCTION

Mayadas and Shatzkes have proposed a theoretical calculation of the electrical resistivity of thin metallic films; they have considered the simultaneous action of isotropic electron scattering, surface scattering and grain boundary scattering. Mola and Heras[2] have tabulated the exact values of the electrical resistivity of monocrystalline and polycrystalline metal films and given linearized expressionsa which are valid in some special cases (p 0, 0.1 < k < 5, 0.1 < r < 0.52). In this paper we propose an approximate expression of the resistivity of monocrystalline films which is valid in larger ranges

The resistivity Of of a monocrystalline film isa given by

TABLE II

TABLE IV

Findings

CONCLUSION