Abstract
Data that demonstrate the usefulness of RR, the electrical resistance ratio between 298 K and 77 K, for monitoring the equality of Al-Si metal films are presented. A correlation between RR, electromigration median-time-to-fail (MTTF), and median-grain-radius (MGR) of the metal is shown, using examples of N/sub 2/ and H/sub 2/O contaminated films. >
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