Abstract
The a.c. dielectric breakdown and electrical resistivity of glass ceramics in the system MgO-Al2O3-SiO2-TiO2 have been studied using three sets of samples having different crystallinity contents. Standard a.c. (50 Hz) breakdown tests were performed at room temperature (18 °C) using planar disc specimens and hemispherically-ended brass contact electrodes. The breakdown process caused the formation of a breakdown channel which terminated at the specimen surface in a crater. The breakdown strength was independent of the rate of voltage rise, but decreased exponentially (60 to 10 kV mm−1) with increasing specimen thickness. A high crystallinity content, good surface finish and a homogeneous microstructure yielded high breakdown strengths whilst poor microstructural development caused a reduction in breakdown strength. The breakdown mechanism is believed to be a combination of electronic, thermal and electromechanical processes.
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