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Abstract
Abstract Dislocations in semiconductors have been associated with a variety of novel phenomena: enhanced carrier recombination, poor electronic-device characteristics, degradation of semiconductor lasers, one-dimensional conductivity and gettering of impurities are but a few examples. In this review some of the basic physics governing the electronic properties of dislocations is qualitatively described. After a general introduction, the state of knowledge regarding the structure of dislocations, calculations regarding their band structure and experimental investigations of the electronic properties of dislocations are reviewed. Finally it is shown how the mechanical and electronic properties of dislocations are inextricably bound together. The article is concluded with a brief section on the future trends in this continuing field of research.
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