Abstract
It is suggested that the carrier mobility of semiconducting glasses is considerably larger than the Hall-mobility because of potential perturbations due to a large density of charged defects and because of the ambipolar character of the conductivity. These potential perturbations force the main carrier transport to occur farther inside the bands at a distance E from the band edges, which is essentially given by the height of potential saddles between Coulomb-repulsive defects E ⋍ 0.2 eV for N rep. ⋍ 10 19 cm −3) , explaining the larger slope of the semiconductivity. The mean free path of carriers is estimated to be of the order of 100 Å in agreement with the large pre-exponential factor of the semiconductivity. The Seebeck-effect—Hall-effect anomaly and the p-type semiconductivity can be explained due to the difference in effective masses of holes and electrons in simple bands.
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