Abstract
The AuCr/SiO2/InSb metal–oxide semiconductor capacitor was fabricated using photo-enhanced chemical vapor deposition. The SiO2 layer with a thickness of 1000 Å was deposited on InSb substrate at 200 °C. The electrical and structural properties were analyzed by capacitance–voltage and Auger electron spectroscopy, respectively. The high-frequency (1-MHz) capacitance–voltage measurements were usually performed after positive or negative bias-temperature stressing. Both the flatband voltage shift and the change of hysteresis of capacitance–voltage curve indicate the existence of enormous negative mobile charges in the bulk SiO2. These negative charges can move in SiO2 freely even in the room temperature. Auger depth profile reveals that these negative mobile charges are metallic indium and antimony ions.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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