Abstract

(Ba,Sr)TiO/sub 3/ (BST) thin film capacitors using Pt, Ir, IrO/sub 2//Ir, Ru and RuO/sub 2//Ru bottom electrode materials are investigated for high density DRAMs. Excellent electrical characteristics (e.g. high dielectric constant and low leakage current) and TDDB reliability of BST capacitors with Ir bottom electrodes were obtained. The dielectric constant and leakage current of BST on Ir were further improved by postdeposition annealing in O/sub 2/ at 600/spl sim/700/spl deg/C.

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