Abstract
In the past, the suitability of Er for Si-based light emission was already investigated in detail. However, much less attention has been paid to Nd and Ho, which exhibit several emission lines in the near infrared according to their 4f energy level scheme. In this work we measure the electrical and electroluminescence properties of Nd- and Ho-implanted MOS structures and compare them with the corresponding properties of Er-implanted devices. Based on these results their suitability for integrated photonic devices is discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
