Abstract
The electric field distribution inside heavily irradiated silicon particle detectors is deduced using observations of α particle and minimum ionising particle signals. In these detectors α particle signals are observed for both p + and n + side illumination even when the detector is only partially depleted. The observations indicate that the electric field distribution within the partially depleted detector has the contribution expected from a uniform space charge, as in unirradiated detectors, together with a strong, short range, local electric field in the vicinity of the p + electrode and a non-zero electric field in the remaining part of the detector.
Highlights
The behaviour of unirradiated silicon particle detectors is well understood
In this paper we describe our observations of particle signals for illumination from both sides of a heavily irradiated detector as well as those of minimum ionising particles (MIPs) from a source
Assuming that the electric eld pattern follows the form described in the previous section we can develop a model to describe the observed particle collection eciency (CCE) for illumination from the p+ side for voltages below the depletion voltage, Ud
Summary
The behaviour of unirradiated silicon particle detectors is well understood. If they are illuminated by particles, signals are observed from the junction side at all voltages whereas they are only observed from the ohmic side at voltages just below the depletion voltage when the electric eld reaches a depth to which the particles penetrate. The unexpected observation of particle signals from the p+ side in irradiated detectors shows that there must be an electric eld present in such detectors at this side.
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