Abstract
Methods of determining the electric field distribution in a field-ion microscope are reviewed. Details of the authors' solution for the field are given, and correlation with experiment is shown to be good. The calculation of ion trajectories is discussed. Average values of the field-induced stresses over various planes in a specimen are estimated. Under typical conditions of imaging the tensile and shear stresses near the apex are of the same order as the theoretical cleavage and shear strengths, and even 1 μm from the apex the shear stress is of the same order as the bulk yield stress. Some effects of these stresses on a specimen defect configuration are described.
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