Abstract
We present the results of our recent electron paramagnetic resonance (EPR) studies of the EI4 EPR centre in electron-irradiated high-purity semi-insulating 6H SiC. Higher signal intensities and better resolution compared with previous studies have enabled a more detailed study of the hyperfine (hf) structure. Based on the observed hf structure due to the interaction with Si and C neighbours, the effective spin S=1, the C1h-symmetry and the annealing behaviour, we suggest a carbon vacancy–carbon antisite complex in the neutral charge state, VCVCCSi0, with the vacancies and the antisite in the basal plane, as a new defect model for the centre.
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