The Effects of Variable Thermal Conductivity in Semiconductor Materials Photogenerated by a Focused Thermal Shock

Faris Alzahrani

doi:10.3390/math8081230

Abstract

In this work, the generalized photo-thermo-elastic model with variable thermal conductivity is presented to estimates the variations of temperature, the carrier density, the stress and the displacement in a semiconductor material. The effects of variable thermal conductivity under photo-thermal transport process is investigated by using the coupled model of thermoelastic and plasma wave. The surface of medium is loaded by uniform unit step temperature. Easily, the analytical solutions in the domain of Laplace are obtained. By using Laplace transforms with the eigenvalue scheme, the fields studied are obtained analytically and presented graphically.

Highlights

The theory of bodies explains the properties of the inner structure of some materials when the second law of thermodynamics is used
The laws of the balance of a continuum medium are used from the first moment the heat energy equations with microstructure when are added to the governing equation
The purpose of this paper is to study the effects of the variability of thermal conductive in a semiconductor material using the eigenvalues approach

Summary

Introduction

The theory of bodies explains the properties of the inner structure of some materials when the second law of thermodynamics is used. The conduction of thermal energy in thermo-elastic materials with internal structures is investigated. To understand the internal structural properties of elastic media—especially in semiconductor media—the electrical properties of these media must be investigated in such a way that considers of their mechanical-thermal properties. The importance of semiconducting materials is due to their recent uses in many beneficial applications—especially in modern technologies based on new energy alternatives. Many of these applications depend on studying the effects of the fall of the sunlight or a beam of laser on the outer surface of the semiconducting material, without taking into account the internal structure of the medium

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