Abstract
We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200°C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (V th ) of the device can be controlled to the negative direction by increasing the UV exposure time. V th moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.
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