Abstract
A study on Al/p-Si(1 1 1) Schottky barrier diodes (SBDs) parameters with and without a thin chemical oxide layer on p-type Si has been performed. The oxide layer has been formed by a wet chemical oxidation in HNO 3 solution. In order to avoid native oxide formation on the sample surface, the silicon dangling bonds have been passivated with hydrogen atoms by dipping in a NH 4F solution. It is shown that these treatments give almost the same barrier height values. In addition, it has been found that the treatment of the sample back surface in NH 4F solution reduces the reverse current and the series resistance.
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