The Effects of Traps in the Semiconductor on the Characteristics of MOS Transistors

Abstract

The influences of hypothetic and real deep lying centers introduced intentionally or not in the semiconductor on the characteristics of MOS transistors are formulated and are numerically computed for silicon silicon-dioxide structures, on the assumption that the centers are distributed uniformly and the mobility of carriers in the channel is constant and independent of the existence of the centers. A deterioration or an improvement due to an introduction of the centers, depending on the position of levels associated with the center in the forbidden gap and the values of their capture cross sections for electrons and holes, is resulted.