Abstract

Amorphous TiO2 thin films were respectively annealed by 13.56 MHz radio frequency (RF) atmospheric pressure plasma at discharge powers of 40, 60, 80 W and thermal treatment at its corresponding substrate temperature (Ts). Ts was estimated through three measurement methods (thermocouple, Newton’s law of cooling and OH optical emission spectra simulation) and showed identically close results of 196, 264 and 322 °C, respectively. Comparing with thermal annealing, this RF atmospheric pressure plasma annealing process has obvious effects in improving crystallization of the amorphous films, based on the XRD and Raman analysis of the film. Amorphous TiO2 film can be changed to anatase film at about 264 °C of Ts for 30 min plasma treatment, while it almost remains amorphous after 322 °C thermal treatment for the same time.

Highlights

  • Titanium dioxide (TiO2 ) film has been extensively investigated in the last decades by many researchers

  • We have investigated the crystallization process of amorphous TiO2 film annealed this paper, we have investigated theitscrystallization of amorphous

  • Materials and 2 films amorphous thin films were prepared by atmospheric pressure dielectric barrier thin were prepared by atmospheric pressure dielectric barrier discharges discharges (AP-DBD)

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Summary

Introduction

Titanium dioxide (TiO2 ) film has been extensively investigated in the last decades by many researchers. TiO2 is a kind of chemically stable and body-friendly semiconductor material with high refractive index [1], photocatalytic activity [2], and wide-band gap [3]. With these outstanding properties, TiO2 is widely used as a white pigment in paints, toothpastes [4], an antireflection coating [5], photocatalyst in environmental [6,7] and energy field [8,9], and a transport layer in dye-sensitized solar cell [10] and perovskite solar cells [11]. It is crystallized found that the films 30 thermally treated with higher temperatures were still s amorphous. It is found that the films thermally treated with higher temperatures were still amorphous

Methods
Plasma Treatment
Temperature Measurement during Plasma Annealing
Heating Treatment
Results and Discussion
I-V Curve and OES Test of the Discharge
Temperature Measured
Thermocouple
OH Peak Simulation
Newton’s Law
Thin Film Characterization
Treatment Method
Conclusions
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