Abstract
Lanthanum modified lead zirconate titanate thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrate by R.F. magnetron sputtering method. The thin films were deposited at 500 °C and annealed at various temperatures (550 ~ 750 °C) by rapid thermal processing. The structure and the morphology of the films were measured by an X-ray diffraction and an atomic force microscope. The hysteresis loops and the fatigue properties of thin films were measured by a precision material analyzer. As the annealing temperature increased, the remnant polarization value increased whereas the coercive field was reduced. In our switching polarization endurance analysis, the remnant polarization of PLZT thin films annealed at 750 °C decreased after 10 9 switching cycles in the form of square waves.
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