Abstract
Cu(In x Ga 1− x )Se 2 (CIGS) thin films were prepared by selenization of CuInGa single-layer metallic precursors. At the first stage, CuInGa metallic precursors were deposited onto soda lime glass by direct current (DC) magnetron sputtering system using a CuInGa ternary alloy target with a composition ratio of Cu:In:Ga of 1:0.7:0.3. The precursor films were reacted with Se vapor in vacuum evaporation system. By means of X-ray diffraction (XRD), field emission scanning electron microscope (SEM) and electron probe microanalysis (EPMA), it was found that CIGS thin films exhibit large facetted grains and single chalcopyrite phase with preferred orientation along (1 1 2) plane. Meanwhile, the surface roughness of the CIGS films can be determined by the morphology of the precursor films.
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